PART |
Description |
Maker |
HYB25D128160ATL-7 HYB25D128400ATL-6 HYB25D128400AT |
8M X 16 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66 32M X 4 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 32M X 4 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66 16M X 8 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66 16M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 8M X 16 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66 8M X 16 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 32M X 4 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66 128 Mbit Double Data Rate SDRAM 128兆双倍数据速率SDRAM
|
Infineon Technologies AG
|
HYMD212G726DF4-D43 HYMD212G726DF4-D43J HYMD212G726 |
184pin Registered DDR SDRAM DIMMs 32M X 8 DDR DRAM MODULE, 0.7 ns, DMA184 ROHS COMPLIANT, DIMM-184 32M X 8 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
|
http:// Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
EDD5108ADTA-7BTI EDD5116ADTA-7BTI EDD5108ADTA-TI D |
512M bits DDR SDRAM WTR (Wide Temperature Range) 32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Elpida Memory ELPIDA MEMORY INC
|
M312L3223CT0 M312L3223CT0-LB3 |
32M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 M312L3223CT0 DDR SDRAM 184pin DIMM Data Sheet
|
Samsung Electronic
|
V58C2512164SBI5 V58C2512804SBJ5 V58C2512804SBLE5 |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 64M X 8 DDR DRAM, 0.7 ns, PBGA60 64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
PROMOS TECHNOLOGIES INC
|
HYMD232646C8J-J HYMD232646C8J-D43 |
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184 DDR SDRAM - Unbuffered DIMM 256MB
|
Hynix Semiconductor, Inc.
|
MT46H32M32LFCG-5A |
32M X 32 DDR DRAM, PBGA152
|
|
W9751G6JB-25I W9751G6JB-18 |
32M X 16 DDR DRAM, 0.4 ns, PBGA84 32M X 16 DDR DRAM, 0.35 ns, PBGA84
|
WINBOND ELECTRONICS CORP
|
W9751G6IB-25 |
32M X 16 DDR DRAM, 0.4 ns, PBGA84
|
WINBOND ELECTRONICS CORP
|
HYB18TC256800AF-3.7 |
32M X 8 DDR DRAM, 0.5 ns, PBGA60
|
QIMONDA AG
|
K4T51163QI-HIE70 |
32M X 16 DDR DRAM, 0.4 ns, PBGA84
|
|
|